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Sputter Depth Profiling By using a low-energy sputter ion source, fitted to the Qtac100, in a dual beam mode with LEIS analysis, high-resolution chemical depth profiles are obtained. In contrast to SIMS, there is no need to use reactive sputter species, which lead to changes in sputter rate and ionisation yield close to the surface. The Qtac100 provides easy quantification even in the first few nanometres of the profile.  |
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Sputter depth profile of a 30 keV arsenic implant into silicon, measured with LEIS analysis during 1 keV argon sputtering |