company-IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
company-IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
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IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
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IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
History

Today, ION-TOF GmbH is known for its innovative ion beam technology for surface analysis with different product lines in TOF-SIMS and LEIS.

TOF-SIMS and many of its applications have been pioneered by Prof. Benninghoven and his group in the early 80’s.
Two instrument generations for surface spectroscopy were developed at the University of Muenster. In 1989 ION-TOF started to commercialise the technique and has continued the development of TOF-SIMS instrumentation.

In 2007 ION-TOF expanded its product range to the complementary technique of high sensitivity low energy ion scattering (LEIS). Based on the pioneering research and instrument development carried out by Professor Brongersma and his group at the Eindhoven University of Technology, carried forward by Calipso BV, and their long term application experience, ION-TOF has developed the next generation of LEIS instruments.
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
Qtac100
2007     Qtac100
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF.SIMS 300 R
2006     TOF.SIMS 300 R
2005 MCs mode with cluster primary ions
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF.SIMS 5
2004     Bi Cluster Ion Source for further improved cluster performance
2003 C60 Cluster Ion Source for surface spectroscopy
and depth profiling
2002 Three-lens Cluster LMIG with electrodynamic mass filter for sub-micron imaging using Au cluster ions
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF-SIMS IV
1999     First imaging results using Au cluster ions
1999 12” wafer analysis capability
1998 SF6-Source
1997 Macroraster for large area analysis
1995 Patented Burst Mode for imaging
1994 First Dual Beam Mode depth profiling
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF-SIMS III
1993     8” wafer analysis capability
1990 Motionless ultrafast blanking of Ga gun
1990 Flexible sample handling with 5 axis stage
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF-SIMS II
1988     First charge compensation for analysis of insulators
1986 High mass accuracy in low ppm range
1986 First TOF mass resolution > 10.000
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF-SIMS I
1984     High mass range > 10.000 u with 20 kV postacceleration
1982 World's first high transmission
energy focusing TOF-SIMS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS